A reliable bi-polarity write/erase technology in flash EEPROMs

Publisher Website

4 December 2002

proceedings article
Published by Institute of Electrical and Electronics Engineers (IEEE)

https://doi.org/10.1109/iedm.1990.237214

Abstract

No abstract available

This publication has 2 references indexed in Scilit:

Extended data retention characteristics after more than 10/sup 4/ write and erase cycles in EEPROMs
Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
Degradations due to hole trapping in flash memory cells
IEEE Electron Device Letters, 1989