Impurity Effects in the Growth of 4H-SiC Crystals by Physical Vapor Transport
- 1 January 1999
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- A Theoretical and Empirical Perspective of SiC Bulk GrowthMRS Proceedings, 1998
- 4H-SiC MESFET's with 42 GHz f/sub max/IEEE Electron Device Letters, 1996
- Deep level transient spectroscopic and Hall effect investigation of the position of the vanadium acceptor level in 4H and 6H SiCApplied Physics Letters, 1996
- Large diameter 6H-SiC for microwave device applicationsJournal of Crystal Growth, 1994
- Single crystal growth of SiC substrate material for blue light emitting diodesIEEE Transactions on Electron Devices, 1983
- Investigation of growth processes of ingots of silicon carbide single crystalsJournal of Crystal Growth, 1978