Photo-EPR experiments on defects in irradiated silicon
- 1 January 1976
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects
- Vol. 29 (1) , 7-12
- https://doi.org/10.1080/00337577608233476
Abstract
The defect electrical levels for eight EPR spectra (Si-A10, -A14, -A15, -A16, -G7, -G16, -P2, -P4) are determined from optical bleaching experiments via electron paramagnetic resonance. The defect energy levels are all located near the middle of the band gap in between Ec ∼ 0.40 eV and Eu + 0.40 eV.Keywords
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- Defects in Irradiated Silicon. I. Electron Spin Resonance of the Si-CenterPhysical Review B, 1961