Electrical and structural properties of cadmium selenide thin film transistors
- 30 June 1980
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 23 (6) , 671-679
- https://doi.org/10.1016/0038-1101(80)90053-2
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Cadmium selenide thin-film transistorsJournal of Vacuum Science and Technology, 1978
- The effect of annealing on the semiconductor in a thin film transistorThin Solid Films, 1977
- Theory of the thin film transistorThin Solid Films, 1976
- The effect of the deposition rate and the evaporant non-stoichiometry on the semiconducting properties of cadmium selenide filmsThin Solid Films, 1976
- Discharge of MNOS structuresSolid-State Electronics, 1973
- Hg diffusion-induced defects in CdS crystalsPhilosophical Magazine, 1968
- Hall mobility of electrons in the space-charge layer of thin film CdSe transistorsSolid-State Electronics, 1968
- Unusual electrode configuration for Hall measurements on thin films and field-effect devicesSolid-State Electronics, 1967
- Electrical Properties of AIIBVI Compounds, CdSe and ZnTeJapanese Journal of Applied Physics, 1963
- Theory of Photoconductivity in Semiconductor FilmsPhysical Review B, 1956