Hall mobility of electrons in the space-charge layer of thin film CdSe transistors
- 30 April 1968
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 11 (4) , 459-462
- https://doi.org/10.1016/0038-1101(68)90028-2
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Drift phenomena in CdSe thin film FET'sSolid-State Electronics, 1967
- Unusual electrode configuration for Hall measurements on thin films and field-effect devicesSolid-State Electronics, 1967
- Structure of CdS Evaporated Films in Relation to Their Use as Ultrasonic TransducersJournal of Applied Physics, 1967
- Electron and hole mobilities in inversion layers on thermally oxidized silicon surfacesIEEE Transactions on Electron Devices, 1965
- Electron Mobility Studies in Surface Space-Charge Layers in Vapor-Deposited CdS FilmsJournal of Applied Physics, 1965
- Surface mobility of holes in thermally oxidized silicon measured by the field effect and the hall effectSurface Science, 1964
- Hall Measurements on Silicon Field Effect Transistor StructuresIBM Journal of Research and Development, 1964
- Theory of Photoconductivity in Semiconductor FilmsPhysical Review B, 1956
- Effective Carrier Mobility in Surface-Space Charge LayersPhysical Review B, 1955
- Note on the Hall Potential Across an Inhomogeneous ConductorPhysical Review B, 1950