Optical detection of cross relaxation in SiC

1 July 1982

journal article
research article
Published by American Physical Society (APS) in Physical Review B

Vol. 26 (1) , 26-34
https://doi.org/10.1103/physrevb.26.26

Abstract

We report optical detection of cross relaxation (ODCR) for defects in SiC. Many new defects in as-grown and irradiated SiC have been detected by monitoring the effect of their Zeeman energy-conserving spin flips on the triplet bound-exciton luminescence at Ti and at radiation-produced defects. Defects identified by this technique include the nitrogen donor and aluminum acceptor. ODCR may provide a useful new spectroscopic tool for defect study in semiconductors.

Keywords

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