Range distributions and thermal-annealing properties of low-energy arsenic and indium implants in silicon
- 1 September 1982
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research
- Vol. 200 (2-3) , 491-497
- https://doi.org/10.1016/0167-5087(82)90475-6
Abstract
No abstract availableKeywords
This publication has 24 references indexed in Scilit:
- Shallow implanted layers in advanced silicon devicesNuclear Instruments and Methods, 1981
- Z1 oscillations in low energy heavy ion rangesNuclear Instruments and Methods, 1980
- Z1-oscillations in low-energy heavy-ion rangesNuclear Instruments and Methods, 1980
- Ranges and range theoriesRadiation Effects, 1980
- Comparison of experimental and theoretical ranges of heavy ions in the low energy regionRadiation Effects, 1979
- Heavy ion ranges in aluminium and siliconRadiation Effects, 1978
- Calculations of nuclear stopping, ranges, and straggling in the low-energy regionPhysical Review B, 1977
- The recrystallization of ion implanted silicon layers. I. Pb-Ion implanted siRadiation Effects, 1977
- Heavy-ion range profiles and associated damage distributionsRadiation Effects, 1972
- Theorie der Streuung schneller geladener Teilchen I. Einzelstreuung am abgeschirmten Coulomb-FeldZeitschrift für Naturforschung A, 1947