Shallow implanted layers in advanced silicon devices

This publication has 19 references indexed in Scilit:

• Z1-oscillations in low-energy heavy-ion ranges
  Nuclear Instruments and Methods, 1980
• Low-energy antimony implantation in silicon
  Radiation Effects, 1980
• Solid solubility of As in Si as determined by ion implantation and cw laser annealing
  Applied Physics Letters, 1979
• Some annealing properties of low-energy-antimony—implanted silicon resistors
  Solid-State Electronics, 1979
• Heavy ion ranges in aluminium and silicon
  Radiation Effects, 1978
• Calculations of nuclear stopping, ranges, and straggling in the low-energy region
  Physical Review B, 1977
• Range parameters of heavy ions in amorphous targets at LSS-energies of 0.0006⩽ ϵ ⩽ 0.3
  Physics Letters A, 1975
• Computer simulation of atomic mixing during ion bombardment
  Applied Physics A, 1975
• The application of high resolution rutherford backscattering to the measurement of ion ranges in Si and Al
  Radiation Effects, 1975
• Range Measurements in Oriented Tungsten Single Crystals (0.1-1.0 MeV). I. Electronic and Nuclear Stopping Powers
  Physical Review B, 1967