Natural oxidation of annealed chemically etched porous silicon
- 1 January 1995
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 255 (1-2) , 228-230
- https://doi.org/10.1016/0040-6090(94)05659-2
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Interpretation of the luminescence quenching in chemically etched porous silicon by the desorption of SiH3 speciesApplied Physics Letters, 1994
- Visible photoluminescence from chemically etched porous silicon: Influence of the surface stateSolid State Communications, 1994
- Enhancement and stabilization of porous silicon photoluminescence by oxygen incorporation with a remote-plasma treatmentApplied Physics Letters, 1993
- Rapid-thermal-oxidized porous Si−The superior photoluminescent SiApplied Physics Letters, 1992
- Infrared spectroscopy of Si(111) and Si(100) surfaces after HF treatment: Hydrogen termination and surface morphologyJournal of Vacuum Science & Technology A, 1989
- Adsorption of atomic hydrogen on clean cleaved silicon (111)Surface Science, 1983