High-performance X-band MMIC LNAs using dry recessedPHEMTs

24 April 1997

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 33 (9) , 817-818
https://doi.org/10.1049/el:19970544

Abstract

The authors report compact and low-DC-power LNAs using dry recessed PHEMTs. Dry recess and optimum circuit design were used to reduce the chip size and DC power consumption while improving uniformity and yield. Two-stage PHEMT LNAs showed a noise figure of 1.45 dB at 10 GHz with a 22 dB gain. The active chip size was 0.9 mm² and DC power consumption was 75 mW.

Keywords

YIELD
ACTIVE CHIP SIZE
OPTIMUM CIRCUIT DESIGN
DC POWER CONSUMPTION
NOISE FIGURE
X-BAND MMIC LNA
GAIN
UNIFORMITY
22 DB
DRY RECESSED PHEMT
1.45 DB
LOW-POWER TWO-STAGE AMPLIFIER
75 MW
10 GHZ

This publication has 2 references indexed in Scilit:

High-performance Ka-band monolithic low-noise amplifiers using 0.2-μm dry-recessed GaAs PHEMTs
IEEE Microwave and Guided Wave Letters, 1996
12 GHz low-noise MMIC amplifier designed with a noise model that scales with MODFET size and bias
IEEE Transactions on Microwave Theory and Techniques, 1993