High-performance Ka-band monolithic low-noise amplifiers using 0.2-μm dry-recessed GaAs PHEMTs
- 1 July 1996
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave and Guided Wave Letters
- Vol. 6 (7) , 253-255
- https://doi.org/10.1109/75.502284
Abstract
No abstract availableKeywords
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