A high-performance monolithic Q-band InP-based HEMT low-noise amplifier
- 1 September 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave and Guided Wave Letters
- Vol. 3 (9) , 299-301
- https://doi.org/10.1109/75.244859
Abstract
The authors report a Q-band two-stage MMIC low-noise amplifier based on 0.1- mu m pseudomorphic InAlAs-InGaAs-InP HEMT technology. The amplifier has achieved an average noise figure of 2.3 dB with associated gain of 25 dB over the band from 43 to 46 GHz. This noise figure is the best result ever reported for a monolithic amplifier at this frequency range. In addition, this InP-based amplifier consumes only 12 mW, which is at least three times lower than a GaAs-based counterpart, indicating that InP-based pseudomorphic HEMTs are well suited for very high density monolithic integration or an application where ultra-low-power consumption is required.<>Keywords
This publication has 10 references indexed in Scilit:
- W-band and D-band low noise amplifiers using 0.1 micron pseudomorphic InAlAs/InGaAs/InP HEMTsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Millimeter-wave, cryogenically-coolable amplifiers using AlInAs/GaInAs/InP HEMTsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- W-band MMIC direct detection receiver for passive imaging systemPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- AlInAs/GaInAs on InP HEMT low noise MMIC amplifiersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Monolithic InP HEMT V-band low-noise amplifierIEEE Microwave and Guided Wave Letters, 1992
- A super low-noise 0.1 mu m T-gate InAlAs-InGaAs-InP HEMTIEEE Microwave and Guided Wave Letters, 1991
- Satellite CommunicationsPublished by Springer Nature ,1991
- Performance of In/sub 0.53/Ga/sub 0.47/As and InP junction field-effect transistors for optoelectronic integrated circuits. I. Device analysisJournal of Lightwave Technology, 1989
- AlInAs-GaInAs HEMT for microwave and millimeter-wave applicationsIEEE Transactions on Microwave Theory and Techniques, 1989
- Signal and Noise Properties of Gallium Arsenide Microwave Field-Effect TransistorsPublished by Elsevier ,1975