AlInAs-GaInAs HEMT for microwave and millimeter-wave applications
- 1 January 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 37 (9) , 1279-1285
- https://doi.org/10.1109/22.32210
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- Improved strained HEMT characteristics using double-heterojunction In/sub 0.65/Ga/sub 0.35/As/In/sub 0.52/Al/sub 0.48/As designIEEE Electron Device Letters, 1989
- Microwave performance of AlInAs-GaInAs HEMTs with 0.2- and 0.1- mu m gate lengthIEEE Electron Device Letters, 1988
- Kink effect in submicrometer-gate MBE-grown InAlAs/InGaAs/InAlAs heterojunction MESFETsIEEE Electron Device Letters, 1988
- The effect of InP substrate misorientation on GaInAs-AlInAs interface and alloy qualityJournal of Applied Physics, 1988
- Characteristics of strained In/sub 0.65/Ga/sub 0.35/As/In/sub 0/./sub 52/Al/sub 0/./sub 48/As HEMT with optimized transport parametersIEEE Electron Device Letters, 1988
- Ultra-high-speed digital circuit performance in 0.2- mu m gate-length AlInAs/GaInAs HEMT technologyIEEE Electron Device Letters, 1988
- Photoluminescence broadening mechanisms in high quality GaInAs-AlInAs quantum well structuresApplied Physics Letters, 1988
- The impact of epitaxial layer design and quality on GaInAs/AlInAs high-electron-mobility transistor performanceJournal of Vacuum Science & Technology B, 1988
- High-performance submicrometer AlInAs-GaInAs HEMT'sIEEE Electron Device Letters, 1988
- Optimal noise figure of microwave GaAs MESFET'sIEEE Transactions on Electron Devices, 1979