Improved strained HEMT characteristics using double-heterojunction In/sub 0.65/Ga/sub 0.35/As/In/sub 0.52/Al/sub 0.48/As design
- 1 March 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 10 (3) , 114-116
- https://doi.org/10.1109/55.31686
Abstract
The DC and microwave properties of strained In/sub 0.65/Ga/sub 0.35/As/In/sub 052/Al/sub 0.48/As HEMTs (high electron-mobility transistors) with double-heterojunction design are presented. The high sheet carrier density and good carrier confinement give rise to excellent device performance with very low output conductance. For 1*150- mu m/sup 2/ long-gate HEMTs, the measured cutoff frequency f/sub T/ and maximum frequency of oscillation f/sub max/ are as high as 37 and 66 GHz, respectively.Keywords
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