Low- and high-field transport properties of pseudomorphic InxGa1−xAs/In0.52Al0.48As (0.53≤x≤0.65) modulation-doped heterostructures

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Abstract
We have grown pseudomorphic InxGa1−xAs/In0.52Al0.48As modulation‐doped heterostructures by molecular‐beam epitaxy under carefully controlled growth conditions. Mobilities as high as 13 900, 74 000, and 134 000 cm2/V s are measured at 300, 77, and 4.2 K in a heterostructure with x=0.65. Shubnikov–de Haas measurements indicate that the change in the effective mass with increasing In is not significant and is not responsible for the enhancement in mobilities. We believe that the improvement results from reduced alloy scattering, reduced intersubband scattering, and reduced impurity scattering, all of which result from a higher conduction‐band offset and increased carrier confinement in the two‐dimensional electron gas. The high‐field electron velocities have been measured in these samples using pulsed current‐voltage and pulsed Hall measurements. A monotonic increase in velocities is observed both at 300 and 77 K with an increase of In content in the channel. Velocities of 1.55×107 and 1.87×107 cm/s are measured at 300 and 77 K, respectively, in a In0.65Ga0.35As/In0.52Al0.48As modulation‐doped heterostructure.