Millimeter-wave, cryogenically-coolable amplifiers using AlInAs/GaInAs/InP HEMTs
- 31 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 515-518 vol.2
- https://doi.org/10.1109/mwsym.1993.276769
Abstract
The cryogenic performance of AlInAs/GaInAs/InP 0.1- mu m high-electron-mobility transistors (HEMTs) is reported. Collapse-free DC operation is observed down to the ambient temperature of 18 K. The application of these devices to Q- and E-band low-noise, cryogenically coolable amplifiers is demonstrated. The measured noise temperature of 15 K (noise figure of 0.2 dB) for a multistage 40-45-GHz amplifier with 33 dB of gain at the ambient of 18 K is in close agreement with the prediction of a simple noise model. A very low power consumption per stage of less than 1 mW is recorded. The noise temperature of the E-band cryogenic amplifier is less than 47 K at 70 GHz, demonstrating that the performance of HEMT receivers is now competitive with that of SIS (superconductor-insulator-superconductor) receivers in the 3-mm wavelength atmospheric window.<>Keywords
This publication has 15 references indexed in Scilit:
- Cryogenically-cooled, HFET amplifiers and receivers: state-of-the-art and future trendsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- AlInAs/GaInAs on InP HEMT low noise MMIC amplifiersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Cryogenic small-signal model for 0.55 mu m gate-length ion-implanted GaAs MESFET'sIEEE Microwave and Guided Wave Letters, 1992
- S-parameter characterization and modeling of three-terminal semiconductive devices at cryogenic temperaturesIEEE Microwave and Guided Wave Letters, 1992
- Cryogenic microwave performance of 0.5- mu m InGaAs MESFET'sIEEE Electron Device Letters, 1992
- Some recent developments in the design of SIS mixersInternational Journal of Infrared and Millimeter Waves, 1990
- W-band InGaAs HEMT low noise amplifiersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1990
- Ultra-low-noise millimeter-wave pseudomorphic HEMTsIEEE Transactions on Microwave Theory and Techniques, 1989
- Ultra-low-noise cryogenic high-electron-mobility transistorsIEEE Transactions on Electron Devices, 1988
- FETs and HEMTs at cryogenic temperatures-their properties and use in low-noise amplifiersIEEE Transactions on Microwave Theory and Techniques, 1988