S-parameter characterization and modeling of three-terminal semiconductive devices at cryogenic temperatures
- 1 March 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave and Guided Wave Letters
- Vol. 2 (3) , 111-113
- https://doi.org/10.1109/75.124916
Abstract
Three generations of three-terminal microwave semiconductive devices are measured and analyzed at 297 K and 77 K. FETs, HEMTs, and pseudomorphic-HEMTs (P-HEMTs) are accurately characterized over the frequency range from 1 GHz to 20 GHz using a newly developed split-block test fixture and the through-reflect-line (TRL) calibration technique. Accurate characterization allows small-signal models to be closely fitted at both temperatures. The performance improvement offered by low temperature operation is described.Keywords
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