Performance of In/sub 0.53/Ga/sub 0.47/As and InP junction field-effect transistors for optoelectronic integrated circuits. I. Device analysis
- 1 June 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Journal of Lightwave Technology
- Vol. 7 (6) , 957-965
- https://doi.org/10.1109/50.32364
Abstract
No abstract availableKeywords
This publication has 30 references indexed in Scilit:
- Integrated amplifiers using fully ion-implanted InP JFETs with high transconductanceIEEE Electron Device Letters, 1988
- An optimal annealing technique for ohmic contacts to ion-implanted n-layers in semi-insulating indium phosphideSolid-State Electronics, 1987
- Monolithically integrated n0.53Ga0.47As/InP direct-coupled junction field-effect transistor amplifierIEEE Electron Device Letters, 1986
- Fabrication and characterization of nonalloyed Cr/Au ohmic contacts to n- and p-type In0.53Ga0.47AsIEEE Transactions on Electron Devices, 1986
- A comprehensive analytical model for III-V compound MISFET'sIEEE Transactions on Electron Devices, 1985
- InP JFETs by shallow Zn diffusionPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1983
- Alloyed ohmic contacts to GaAsJournal of Vacuum Science and Technology, 1981
- Signal and Noise Properties of Gallium Arsenide Microwave Field-Effect TransistorsPublished by Elsevier ,1975
- Subthreshold velocity-field characteristics for bulk and epitaxial InPJournal of Applied Physics, 1974
- General theory for pinched operation of the junction-gate FETSolid-State Electronics, 1969