The problem of substrate dissolution in LPE of III–V compounds in the simple solution approximation; Application to the InxGa1−xAsyP1−y/InP system
- 1 July 1981
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 54 (1) , 76-80
- https://doi.org/10.1016/0022-0248(81)90252-9
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Photoluminescence study of perturbed growth of InP on quaternary layers in InGaAsP-InP double heterostructuresApplied Physics Letters, 1980
- The formation of Ga1−xAlxAs layers on the surface of GaAs during continual dissolution into Ga-Al-As solutionsApplied Physics Letters, 1979
- Auger profile study of the influence of lattice mismatch on the LPE InGaAsP-InP heterojunction interfaceApplied Physics Letters, 1979
- 1.67 µm Ga0.47In0.53As/InP DH Lasers Double Cladded with InP by LPE TechniqueJapanese Journal of Applied Physics, 1979
- InP-GaxIn1−xAsyP1−y double heterostructure for 1.5 μm wavelengthApplied Physics Letters, 1978
- Liquid phase epitaxial growth of InGaAs on InPJournal of Crystal Growth, 1976
- Solid-liquid equilibria for quaternary solid solutions involving compound semiconductors in the regular solution approximationJournal of Physics and Chemistry of Solids, 1975
- Thickness and surface morphology of GaAs LPE layers grown by supercooling, step-cooling, equilibrium-cooling, and two-phase solution techniquesJournal of Crystal Growth, 1974
- Phase equilibria in III–V quaternary systems—application to Al-Ga-P-AsJournal of Physics and Chemistry of Solids, 1974