Work hardening and strain relaxation in strained-layer buffers
- 19 August 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (8) , 920-922
- https://doi.org/10.1063/1.106301
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- The energy of an array of dislocations: Implications for strain relaxation in semiconductor heterostructuresPhilosophical Magazine A, 1990
- The driving force for glide of a threading dislocation in a strained epitaxial layer on a substrateJournal of the Mechanics and Physics of Solids, 1990
- Strain relief in compositionally graded InAsxSb1−x buffer layers and InAsxSb1−x/InSb strained-layer superlattices grown by MOCVDJournal of Crystal Growth, 1988
- Work hardening and strain relaxation in strained-layer buffersApplied Physics Letters, 1988
- Defects in epitaxial multilayersJournal of Crystal Growth, 1974
- The mechanism of plastic deformation of crystals. Part I.—TheoreticalProceedings of the Royal Society of London. Series A, Containing Papers of a Mathematical and Physical Character, 1934