Fluorine-enhanced thermal oxidation of silicon in the presence of NF3
- 15 December 1984
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (12) , 1312-1314
- https://doi.org/10.1063/1.95131
Abstract
The oxidation rate of silicon has been dramatically increased at temperatures between 600 and 800 °C by adding NF3 gas to a dry oxygen atmosphere. The chemical analysis of the resulting oxide has revealed that fluorine atoms in SiO2 are incorporated as Si–F bonds. The existence of such bonded‐fluorine atoms enhances the diffusion of oxidant through the oxide layer. The oxidation reaction rate in the SiO2‐Si interface is also remarkably increased because fluorine atoms in the interface create silicon dangling bonds and weakly positively charged silicon atoms as well. The kinetics of the fluorine‐enhanced oxidation has primarily been interpreted in terms of the Deal–Grove model.Keywords
This publication has 7 references indexed in Scilit:
- Heating silicon dioxide at 950–1050 °C in the presence of an NH3+CF4 plasmaJournal of Applied Physics, 1984
- Fluorine-enhanced plasma growth of native layers on siliconApplied Physics Letters, 1980
- Quantitative chemical analysis by ESCAJournal of Electron Spectroscopy and Related Phenomena, 1976
- Hartree-Slater subshell photoionization cross-sections at 1254 and 1487 eVJournal of Electron Spectroscopy and Related Phenomena, 1976
- Kinetics of Thermal Growth of HCl-0[sub 2] Oxides on SiliconJournal of the Electrochemical Society, 1973
- The Effect of HCl and Cl[sub 2] on the Thermal Oxidation of SiliconJournal of the Electrochemical Society, 1972
- General Relationship for the Thermal Oxidation of SiliconJournal of Applied Physics, 1965