GaAs/Ge tandem-cell space concentrator development
- 1 January 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 37 (2) , 455-463
- https://doi.org/10.1109/16.46383
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- A comparison of the errors in determining the conversion efficiency of multijunction solar cells by various methodsSolar Cells, 1988
- High-efficiency GaAs/Ge monolithic tandem solar cellsIEEE Electron Device Letters, 1988
- High altitude current-voltage measurement of GaAs/Ge solar cellsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1988
- GaAs on Ge cell and panel technology for advanced space flight applicationPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1988
- Quantum yield spectra and I-V properties of a GaAs solar cell grown on a Ge substratePublished by Institute of Electrical and Electronics Engineers (IEEE) ,1988
- 28% efficient GaAs concentrator solar cellsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1988
- 27.5-percent silicon concentrator solar cellsIEEE Electron Device Letters, 1986
- Optimum grid-line patterns for concentrator solar cells under nonuniform illuminationSolar Cells, 1985
- Concentration dependence of the absorption coefficient for n− and p−type GaAs between 1.3 and 1.6 eVJournal of Applied Physics, 1975
- Experiments on Ge-GaAs heterojunctionsSolid-State Electronics, 1962