Temperature dependence of electron drift velocity in silicon
- 1 May 1973
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 44 (5) , 2433-2434
- https://doi.org/10.1063/1.1662587
Abstract
Time‐of‐flight electron drift velocity measurements have been made for Si between 300 and 415 °K in the range of electric fields near the velocity saturation knee. The results show a more pronounced decrease from saturation values at the higher temperatures.This publication has 5 references indexed in Scilit:
- Drift velocity of electrons and holes and associated anisotropic effects in siliconJournal of Physics and Chemistry of Solids, 1971
- Electric field profile and electron drift velocities in lithium drifted siliconNuclear Instruments and Methods, 1969
- Electron drift velocity in avalanching silicon diodesIEEE Transactions on Electron Devices, 1967
- Measurement of high-field carrier drift velocities in silicon by a time-of-flight techniqueIEEE Transactions on Electron Devices, 1967
- The field-dependence of carrier mobility in silicon and germaniumJournal of Physics and Chemistry of Solids, 1960