Pressure experiments and self-consistent modelling of the transport properties in delta -doped AlGaAs layers
- 1 June 1991
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 6 (6) , 445-448
- https://doi.org/10.1088/0268-1242/6/6/005
Abstract
Magnetotransport experiments on delta -doped AlxGa1-xAs (xD in a plane of a certain width a. Both parameters are determined by a fitting procedure. The Schrodinger and Poisson equations are solved self-consistently. The conclusion drawn is that in three samples the limited free-carrier concentration under pressure is a consequence of the neutralization of ionized donors and not of the L-valley occupancy.Keywords
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