Silicon nanowires as enhancement-mode Schottky barrier field-effect transistors
- 29 June 2005
- journal article
- Published by IOP Publishing in Nanotechnology
- Vol. 16 (9) , 1482-1485
- https://doi.org/10.1088/0957-4484/16/9/011
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Electrical detection of the spin resonance of a single electron in a silicon field-effect transistorNature, 2004
- High-Speed Schottky-Barrier pMOSFET With$f_T = 280 hbox GHz$IEEE Electron Device Letters, 2004
- A Dual-Gate-Controlled Single-Electron Transistor Using Self-Aligned Polysilicon Sidewall Spacer Gates on Silicon-on-Insulator NanowireIEEE Transactions on Nanotechnology, 2004
- Characteristics of erbium-silicided n-type Schottky barrier tunnel transistorsApplied Physics Letters, 2003
- Small-Diameter Silicon Nanowire SurfacesScience, 2003
- High Performance Silicon Nanowire Field Effect TransistorsNano Letters, 2003
- Beyond the silicon roadmapNature, 2002
- From SOI materials to innovative devicesSolid-State Electronics, 2001
- Functional Nanoscale Electronic Devices Assembled Using Silicon Nanowire Building BlocksScience, 2001
- The work function of the elements and its periodicityJournal of Applied Physics, 1977