Characteristics of erbium-silicided n-type Schottky barrier tunnel transistors
- 23 September 2003
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 83 (13) , 2611-2613
- https://doi.org/10.1063/1.1614441
Abstract
The current–voltage characteristics of erbium-silicided -type Schottky barrier tunnel transistors (SBTTs) are discussed. The -type SBTTs with 60 nm gate lengths shows typical transistor behaviors in drain current to drain voltage characteristics. The drain current on/off ratio is about at low drain voltage regime in drain current to gate voltage characteristics. However, the on/off ratio tends to decrease as the drain voltage increases. From the numerical simulation results, the increase of off-current is mainly attributed to the thermionic current and the increase of drain current is mainly attributed to the tunneling current, respectively. This phenomenon is explained by using drain induced Schottky barrier thickness thinning effect.
Keywords
This publication has 10 references indexed in Scilit:
- Simulation of Schottky barrier tunnel transistor using simple boundary conditionApplied Physics Letters, 2003
- Application of Field-Induced Source/Drain Schottky Metal-Oxide-Semiconductor to Fin-Like Body Field-Effect TransistorJapanese Journal of Applied Physics, 2002
- Electron transport measurements of Schottky barrier inhomogeneitiesApplied Physics Letters, 2002
- Suppression of leakage current in Schottky barrier metal–oxide–semiconductor field-effect transistorsJournal of Applied Physics, 2002
- Physics and applications of the Schottky junction transistorIEEE Transactions on Electron Devices, 2001
- A 25-nm-long Channel Metal-Gate p-Type Schottky Source/Drain Metal-Oxide-Semiconductor Field Effect Transistor on Separation-by-Implanted-Oxygen SubstrateJapanese Journal of Applied Physics, 2000
- Simulation of Schottky barrier MOSFETs with a coupled quantum injection/Monte Carlo techniqueIEEE Transactions on Electron Devices, 2000
- Analysis of Short-Channel Schottky Source/Drain Metal-Oxide-Semiconductor Field-Effect Transistor on Silicon-on-Insulator Substrate and Demonstration of Sub-50-nm n-type Devices with Metal GateJapanese Journal of Applied Physics, 1999
- New complimentary metal–oxide semiconductor technology with self-aligned Schottky source/drain and low-resistance T gatesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1997
- Silicon field-effect transistor based on quantum tunnelingApplied Physics Letters, 1994