Electron transport measurements of Schottky barrier inhomogeneities
- 11 March 2002
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 80 (10) , 1761-1763
- https://doi.org/10.1063/1.1456257
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Nanometer-scale test of the Tung model of Schottky-barrier height inhomogeneityPhysical Review B, 2001
- Chemical Bonding and Fermi Level Pinning at Metal-Semiconductor InterfacesPhysical Review Letters, 2000
- 35 nm Metal Gate p-type Metal Oxide Semiconductor Field-Effect Transistor with PtSi Schottky Source/Drain on Separation by Implanted Oxygen SubstrateJapanese Journal of Applied Physics, 1999
- Sub-40 nm PtSi Schottky source/drain metal–oxide–semiconductor field-effect transistorsApplied Physics Letters, 1999
- Role of interface microstructure in rectifying metal/semiconductor contacts: Ballistic electron emission observations correlated to microstructureJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1996
- Experimental investigation of a PtSi source and drain field emission transistorApplied Physics Letters, 1995
- Silicon field-effect transistor based on quantum tunnelingApplied Physics Letters, 1994
- Lateral variation in the Schottky barrier height of Au/PtSi/(100)Si diodesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1994
- Nanometer-resolved spatial variations in the Schottky barrier height of a Au/n-type GaAs diodePhysical Review B, 1994
- Electron transport at metal-semiconductor interfaces: General theoryPhysical Review B, 1992