Electron transport at metal-semiconductor interfaces: General theory
- 15 June 1992
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 45 (23) , 13509-13523
- https://doi.org/10.1103/physrevb.45.13509
Abstract
A dipole-layer approach is presented, which leads to analytic solutions to the potential and the electronic transport at metal-semiconductor interfaces with arbitrary Schottky-barrier-height profiles. The presence of inhomogeneities in the Schottky-barrier height is shown to lead to a coherent explanation of many anomalies in the experimental results. These results suggest that the formation mechanism of the Schottky barrier is locally nonuniform at common, polycrystalline, metal-semiconductor interfaces.Keywords
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