Simulation of Schottky barrier MOSFETs with a coupled quantum injection/Monte Carlo technique
- 1 June 2000
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 47 (6) , 1241-1246
- https://doi.org/10.1109/16.842968
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Sub-40 nm PtSi Schottky source/drain metal–oxide–semiconductor field-effect transistorsApplied Physics Letters, 1999
- Full-band Monte Carlo investigation of hot carrier trends in the scaling of metal-oxide-semiconductor field-effect transistorsIEEE Transactions on Electron Devices, 1998
- Reduction of the Floating Body Effect in SOI MOSFETs by Using Schottky Source/Drain ContactsJapanese Journal of Applied Physics, 1998
- Experimental investigation of a PtSi source and drain field emission transistorApplied Physics Letters, 1995
- Electronic Structure and Optical Properties of SemiconductorsPublished by Springer Nature ,1989
- Theory of resonant tunneling in a variably spaced multiquantum well structure: An Airy function approachJournal of Applied Physics, 1987