Reduction of the Floating Body Effect in SOI MOSFETs by Using Schottky Source/Drain Contacts
- 1 March 1998
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 37 (3S)
- https://doi.org/10.1143/jjap.37.1295
Abstract
A new silicon-on-insulator metal-oxide-semiconductor field-effect transistor (SOI MOSFET) structure, which employs the Schottky contacts at the source/drain, is proposed to suppress the floating-body effect. Using a Schottky contact, excess holes in the channel region are smoothly absorbed into the source and the impact ionization near the drain is reduced due to the built-in field. Analysis with two-dimensional simulation verifies these effects. As a result, the early drain breakdown of the SOI MOSFET is suppressed. A test device fabricated using Er silicide self-aligned technology proves the technical feasibility of the proposed device.Keywords
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