A p-channel MESFET on silicon using an erbium gate
- 30 September 1985
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 28 (9) , 913-915
- https://doi.org/10.1016/0038-1101(85)90084-x
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Surface morphology and electronic properties of ErSi2Thin Solid Films, 1983
- The Schottky-barrier height of the contacts between some rare-earth metals (and silicides) and p-type siliconApplied Physics Letters, 1981
- Single-Step Optical Lift-Off ProcessIBM Journal of Research and Development, 1980
- Measurements of the rectifying barrier heights of the various iridium silicides with n-SiApplied Physics Letters, 1979