The Schottky-barrier height of the contacts between some rare-earth metals (and silicides) and p-type silicon
- 1 June 1981
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 38 (11) , 865-866
- https://doi.org/10.1063/1.92201
Abstract
Some rare‐earth elements, Tb, Er, Yb (including Y) and some of their respective silicides were found to make ohmic contacts to n‐type silicon. Forward I/V and photoresponse measurements give values of about 0.7 eV for the Schottky‐barrier height to p‐type silicon. The sum of this value and of the experimentally estimated barrier height to n‐type silicon, 0.4 eV, corresponds to the band gap of silicon.Keywords
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