A review of the theory, technology and applications of metal-semiconductor rectifiers
- 1 February 1978
- journal article
- review article
- Published by Elsevier in Thin Solid Films
- Vol. 48 (3) , 261-291
- https://doi.org/10.1016/0040-6090(78)90007-x
Abstract
No abstract availableThis publication has 68 references indexed in Scilit:
- Field and thermionic-field emission in Schottky barriersPublished by Elsevier ,2002
- A review of the theory and technology for ohmic contacts to group III–V compound semiconductorsSolid-State Electronics, 1975
- Use of a double diffused guard ring to obtain near ideal I–V characteristics in Schottky barrier diodesSolid-State Electronics, 1970
- Current transport in metal-semiconductor barriersSolid-State Electronics, 1966
- Metal-semiconductor surface barriersSolid-State Electronics, 1966
- Metal-semiconductor rectifiers and transistorsSolid-State Electronics, 1963
- Conduction properties of the Au-n-type—Si Schottky barrierSolid-State Electronics, 1963
- Vereinfachte und erweiterte Theorie der Randschicht-gleichrichterThe European Physical Journal A, 1942
- Zur Halbleitertheorie der Sperrschicht- und SpitzengleichrichterThe European Physical Journal A, 1939
- A note on the theory of rectificationProceedings of the Royal Society of London. Series A, Containing Papers of a Mathematical and Physical Character, 1932