Use of a double diffused guard ring to obtain near ideal I–V characteristics in Schottky barrier diodes
- 30 June 1970
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 13 (6) , 857-863
- https://doi.org/10.1016/0038-1101(70)90071-7
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- p-n junction—Schottky barrier hybrid diodeIEEE Transactions on Electron Devices, 1969
- Metal-silicon Schottky barriersSolid-State Electronics, 1968
- Silicon Schottky Barrier Diode with Near-Ideal I-V CharacteristicsBell System Technical Journal, 1968
- Current transport in metal-semiconductor barriersSolid-State Electronics, 1966
- Metal-semiconductor surface barriersSolid-State Electronics, 1966
- Effect of junction curvature on breakdown voltage in semiconductorsSolid-State Electronics, 1966
- The Richardson constant for thermionic emission in Schottky barrier diodesSolid-State Electronics, 1965
- Photoelectric Determination of the Image Force Dielectric Constant For Hot Electrons in Schottky BarriersJournal of Applied Physics, 1964