New complimentary metal–oxide semiconductor technology with self-aligned Schottky source/drain and low-resistance T gates
- 1 November 1997
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 15 (6) , 2795-2798
- https://doi.org/10.1116/1.589730
Abstract
No abstract availableKeywords
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