SIMS Study of Compositional Disordering in Si Ion Implanted AlGaAs–GaAs Superlattice
- 1 May 1986
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 25 (5A) , L385
- https://doi.org/10.1143/jjap.25.l385
Abstract
Compositional disordering in Si ion implanted AlGaAs–GaAs superlattices (SL's) has been studied by SIMS. It is found that Si diffuses fast when the Si concentration exceeds 3×1018 cm-3. The disordering of the SL's always occurs with this fast Si diffusion. It is suggested that the disordering of the SL's is induced by the substitutional exchange of (Si I I I –Si V ) pairs with the matrix vacancies. The Si diffusion in the SL layer is not enhanced by the presence of the GaAlAs/GaAs interface.Keywords
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