Passivation of paramagnetic Si-SiO2 interface states with molecular hydrogen
- 8 August 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (6) , 508-510
- https://doi.org/10.1063/1.100620
Abstract
Dry thermal oxides were grown on (111) silicon substrates at 850 °C. The Pb centers associated with this (111) Si-SiO2 interface were observed with electron paramagnetic resonance to be stable under subsequent annealing in vacuum up to at least 850 °C. The rate of passivation of Pb centers with H2 was observed to be proportional to the concentration of H2 in the oxide and the density of Pb centers. The forward reaction rate constant kf is temperature dependent and obeys the Arrhenius relationship having an activation energy Ef of 1.66±0.06 eV and a pre-exponential factor k0f of 1.94 (+2./−1.)×10−6 cm3 /s for temperatures at least between 230 and 260 °C. The linear H2 pressure dependence in the rate of passivation and the magnitude of k0f are reasonably consistent with a model in which the H2 molecule reacts directly with Pb centers during its diffusional motion among the interstices of the SiO2 network and the reaction site at Pb centers.Keywords
This publication has 19 references indexed in Scilit:
- Theory of thecenter at the Si/interfacePhysical Review B, 1987
- Hyperfine interactions of thecenter at the/Si(111) interfacePhysical Review Letters, 1987
- Structural Features at the Si — SiO2 Interface*Zeitschrift für Physikalische Chemie, 1987
- Electron Paramagnetic Resonance Studies of Interface Defects in Oxidized SiliconZeitschrift für Physikalische Chemie, 1987
- Dipolar interactions between dangling bonds at the (111) Si-interfacePhysical Review B, 1986
- Hole traps and trivalent silicon centers in metal/oxide/silicon devicesJournal of Applied Physics, 1984
- 2 9Si hyperfine structure of unpaired spins at the Si/SiO2 interfaceApplied Physics Letters, 1983
- ESR centers, interface states, and oxide fixed charge in thermally oxidized silicon wafersJournal of Applied Physics, 1979
- Relaxation of (111) silicon surface atoms from studies of Si4H9 clustersSolid State Communications, 1976
- Study of Silicon-Silicon Dioxide Structure by Electron Spin Resonance IJapanese Journal of Applied Physics, 1971