Structural Features at the Si — SiO2 Interface*
- 1 January 1987
- journal article
- research article
- Published by Walter de Gruyter GmbH in Zeitschrift für Physikalische Chemie
- Vol. 151 (1-2) , 177-189
- https://doi.org/10.1524/zpch.1987.151.part_1_2.177
Abstract
Article Structural Features at the Si — SiO2 Interface* was published on January 1, 1987 in the journal Zeitschrift für Physikalische Chemie (volume 151, issue 1-2).This publication has 11 references indexed in Scilit:
- Dipolar interactions between dangling bonds at the (111) Si-interfacePhysical Review B, 1986
- Electron spin resonance of [11̄1], [1̄11], and [111̄] oriented dangling orbital P b0 defects at the (111) Si/SiO2 interfaceApplied Physics Letters, 1986
- Strain broadening of the dangling-bond resonance at the (111)Si-interfacePhysical Review B, 1986
- 2 9Si hyperfine structure of unpaired spins at the Si/SiO2 interfaceApplied Physics Letters, 1983
- Interface states and electron spin resonance centers in thermally oxidized (111) and (100) silicon wafersJournal of Applied Physics, 1981
- ESR centers, interface states, and oxide fixed charge in thermally oxidized silicon wafersJournal of Applied Physics, 1979
- EPR techniques for studying defects in siliconReview of Scientific Instruments, 1977
- Hyperfine Structure of the Neutral () Vacancy-Oxygen Center in Ion-Implanted SiliconPhysical Review B, 1972
- Study of Silicon-Silicon Dioxide Structure by Electron Spin Resonance IJapanese Journal of Applied Physics, 1971
- Defects in Irradiated Silicon: Electron Paramagnetic Resonance and Electron-Nuclear Double Resonance of the Si-CenterPhysical Review B, 1964