O17Hyperfine Structure of the Neutral (S=1) Vacancy-Oxygen Center in Ion-Implanted Silicon

The intensity of the ${}_{}{}^{17}{}_{}{}^{}\mathrm{O}$ hyperfine spectrum associated with the ${}_{}{}^{28}{}_{}{}^{}\mathrm{Si}$-${}_{}{}^{17}{}_{}{}^{}\mathrm{O}$-${}_{}{}^{28}{}_{}{}^{}\mathrm{Si}$ isotopic configuration of the vacancy-oxygen ($\mathrm{Si}-S1\mathrm{}$) center was enhanced by ion implantation of ${}_{}{}^{17}{}_{}{}^{}\mathrm{O}$ into silicon. The $\mathrm{Si}-S1\mathrm{}$ ${}_{}{}^{17}{}_{}{}^{}\mathrm{O}$ hyperfine spectrum was measured by electron paramagnetic resonance. An analysis of the $\mathrm{Si}-S1\mathrm{}$ ${}_{}{}^{17}{}_{}{}^{}\mathrm{O}$ hyperfine spectrum indicates that the numerical values for the elements in the ${}_{}{}^{17}{}_{}{}^{}\mathrm{O}$ hyperfine coupling tensor $\stackrel{}{A}$ are $A_{\mathrm{xx}}=-{11.5}_1\times {10}^{-4\mathrm{}}$ ${\mathrm{cm}}^{-1\mathrm{}}$, $A_{\mathrm{yy}}=-{12.9}_0\times {10}^{-4\mathrm{}}$ ${\mathrm{cm}}^{-1\mathrm{}}$, and $A_{\mathrm{zz}}=-{13.3}_9\times {10}^{-4\mathrm{}}$ ${\mathrm{cm}}^{-1\mathrm{}}$. The ${}_{}{}^{17}{}_{}{}^{}\mathrm{O}$ hyperfine coupling tensor was analyzed in terms of the admixture of oxygen-valence orbitals into the one-electron paramagnetic molecular orbitals ${\chi }_1\left({\Gamma }_1\right)$ and ${\chi }_4\left({\Gamma }_4\right)$. In particular, only 4.1% of $〈{\chi }_1\left({\Gamma }_1\right)\left|{\chi }_1\right({\Gamma }_1)〉$ and 1.8% of