EPR techniques for studying defects in silicon

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Abstract
Due to long spin‐lattice relaxation times and low defect concentrations, the EPR study of defects in irradiated silicon requires special experimental capabilities. The superheterodyne spectrometer described in this paper, which has been used in numerous defect studies, can detect 1010 spins/Oe linewidth. This spectrometer employs superstabilized, phase‐locked klystrons, can be tuned to either the absorption or the dispersion mode, utilizes phase‐sensitive detection, and can operate at either X or K band. The microwave probe and cryogenic system allow us to produce defects in situ at low temperatures and to probe these defects with light, stress, and annealing. For these measurements the cavity and sample can be stabilized to ±0.01 K between 4 and 300 K.