Relative Hydrogen Content in Plasma-Enhanced CVD Silicon Nitride Films: Substrate Temperature Dependence and Effect of Thermal Annealing
- 16 May 1985
- journal article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 89 (1) , K39-K43
- https://doi.org/10.1002/pssa.2210890154
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Characterization of Plasma Silicon Nitride LayersJournal of the Electrochemical Society, 1983
- Hydrogen content of a variety of plasma-deposited silicon nitridesJournal of Applied Physics, 1982
- The hydrogen content of plasma-deposited silicon nitrideJournal of Applied Physics, 1978
- New precision technique for measuring the concentration versus depth of hydrogen in solidsApplied Physics Letters, 1976