Surface morphology of SIMOX wafers

19 January 1989

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 25 (2) , 154-156
https://doi.org/10.1049/el:19890112

Abstract

The surface structure of SIMOX wafers produced by a 100 mA class oxygen implanter has been investigated. Wafer temperature during implantation affects the surface morphology and thickness of the top silicon layers. The unevenness of the surface is closely related to cavities in the top silicon layers. Film thickness reduction is explained by the sublimation of SiO formed at the surface.

Keywords

TOP SI LAYER
SUBLIMATION OF SIO
CAVITIES
WAFER TEMPERATURE DURING IMPLANTATION
SIMOX WAFERS
SURFACE MORPHOLOGY
SURFACE STRUCTURE
FILM THICKNESS REDUCTION
100 MA

This publication has 1 reference indexed in Scilit:

Oxygen Precipitation Along Individual Ion Tracks During High Dose O⁺ Implantation into Silicon
MRS Proceedings, 1987