Oxygen Precipitation Along Individual Ion Tracks During High Dose O+ Implantation into Silicon
- 1 January 1987
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Involvement of oxygen-vacancy defects in enhancing oxygen diffusion in siliconApplied Physics Letters, 1986
- SiO2 buried layer formation by subcritical dose oxygen ion implantationApplied Physics Letters, 1986
- Growth law for disk precipitates, and oxygen precipitation in siliconApplied Physics Letters, 1986
- Microstructure of silicon implanted with high dose oxygen ionsApplied Physics Letters, 1985
- Influence of substrate heating and thermal annealing on the surface crystallinity in single Si crystals implanted with high doses of 16ONuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
- Silicon on Insulator Formed By O+ OR N+ Ion ImplantationMRS Proceedings, 1985
- Influence of substrate temperature on the formation of buried oxide and surface crystallinity during high dose oxygen implantation into SiApplied Physics Letters, 1984
- Synthesis of silicon dioxide by ion implantationNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1984
- High Energy Density Collision Cascades and Spike EffectsPublished by Elsevier ,1984
- Evidence for a thermal spike mechanism in the erosion of frozen xenonRadiation Effects, 1980