Influence of substrate heating and thermal annealing on the surface crystallinity in single Si crystals implanted with high doses of 16O
- 1 May 1985
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 10-11, 574-579
- https://doi.org/10.1016/0168-583x(85)90311-8
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Influence of substrate temperature on the formation of buried oxide and surface crystallinity during high dose oxygen implantation into SiApplied Physics Letters, 1984
- Synthesis of silicon dioxide by ion implantationNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1984
- Characterization of buried SiO2 layers formed by ion implantation of oxygenJournal of Electronic Materials, 1984
- Formation of buried insulating layers in silicon by the implantation of high doses of oxygenNuclear Instruments and Methods in Physics Research, 1983
- Thermal annealing behavior of an oxide layer under siliconApplied Physics Letters, 1982
- Formation of Abrupt Interfaces between Surface Silicon and Buried SiO2 Layers by Very High Dose Oxygen-Ion ImplantationJapanese Journal of Applied Physics, 1980