Characterization of buried SiO2 layers formed by ion implantation of oxygen

This publication has 15 references indexed in Scilit:

• The Top Silicon Layer of SOI Formed by Oxygen Ion Implantation
  IEEE Transactions on Nuclear Science, 1983
• Thermal annealing behavior of an oxide layer under silicon
  Applied Physics Letters, 1982
• An Investigation of the Properties of an Epitaxial Si Layer on a Substrate with a Buried SiO₂ Layer Formed by Oxygen-Ion Implantation
  Japanese Journal of Applied Physics, 1982
• Multiple SOI Structure Fabricate by High Dose Oxygen Implantation and Epitaxial Growth
  Japanese Journal of Applied Physics, 1981
• A high-speed buried channel MOSFET isolated by an implanted silicon dioxide layer
  IEEE Transactions on Electron Devices, 1981
• Characteristics of MOSFETs fabricated in silicon-on-insulator material formed by high-dose oxygen ion implantation
  Electronics Letters, 1981
• The Microstructure of Silicon-on-Insulator Structures Formed by High Dose Oxygen Ion Implantation
  MRS Proceedings, 1981
• TEM, AES and XPS Studies of Si Layer on Buried SiO₂ Layer Formed by High-Dose Oxygen Ion-Implantation
  Japanese Journal of Applied Physics, 1980
• Formation of Abrupt Interfaces between Surface Silicon and Buried SiO₂ Layers by Very High Dose Oxygen-Ion Implantation
  Japanese Journal of Applied Physics, 1980
• C.M.O.S. devices fabricated on buried SiO ² layers formed by oxygen implantation into silicon
  Electronics Letters, 1978