Synthesis of silicon dioxide by ion implantation
- 1 February 1984
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 1 (2-3) , 331-343
- https://doi.org/10.1016/0168-583x(84)90089-2
Abstract
No abstract availableKeywords
This publication has 40 references indexed in Scilit:
- Carrier lifetimes in silicon epitaxial layers deposited on oxygen-implanted substratesElectronics Letters, 1983
- On the nature of the phases formed when metals are implanted with oxygen or nitrogenRadiation Effects, 1982
- High Speed C-MOS IC Using Buried SiO2 Layers Formed by Ion ImplantationJapanese Journal of Applied Physics, 1980
- C.M.O.S. devices fabricated on buried SiO 2 layers formed by oxygen implantation into siliconElectronics Letters, 1978
- Properties of SiO2 films formed by oxygen implantation into siliconThin Solid Films, 1978
- The dielectric breakdown properties and I–V characteristics of thin SiO2 films formed by high dose oxygen ion implantation into siliconThin Solid Films, 1977
- Thin SiO2 films formed by oxygen ion implantation in silicon: Electron microscope investigations of the Si-SiO2 interface structures and their c-v characteristicsThin Solid Films, 1976
- Formation of thin SiO2 films by high dose oxygen ion implantation into silicon and their investigation by IR techniquesThin Solid Films, 1976
- Criteria for bombardment-induced structural changes in non-metallic solidsRadiation Effects, 1975
- Formation of SiO2 Films by Oxygen-Ion BombardmentJapanese Journal of Applied Physics, 1966