The dielectric breakdown properties and I–V characteristics of thin SiO2 films formed by high dose oxygen ion implantation into silicon
- 1 April 1977
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 42 (2) , 227-235
- https://doi.org/10.1016/0040-6090(77)90421-7
Abstract
No abstract availableThis publication has 17 references indexed in Scilit:
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