Involvement of oxygen-vacancy defects in enhancing oxygen diffusion in silicon
- 4 August 1986
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (5) , 262-264
- https://doi.org/10.1063/1.97190
Abstract
We have proposed previously that the extremely high rate of single diffusion jumps of oxygen atoms in silicon during electron irradiation of crystals above 300 °C is due to the sequential trapping and detrapping of vacancies. In support of this proposal we now demonstrate thermal dissociation of up to 75% of oxygen-vacancy centers by monitoring their destruction in irradiated and annealed crystals. An important new step is the calibration of the strength of the infrared 830 cm−1 absorption band via a novel procedure to give the concentration of oxygen-vacancy complexes in crystals.Keywords
This publication has 11 references indexed in Scilit:
- The effect of metallic contamination on enhanced oxygen diffusion in silicon at low temperaturesJournal of Physics C: Solid State Physics, 1985
- The Metallurgy of Oxygen in SiliconJOM, 1985
- An infrared and neutron scattering analysis of the precipitation of oxygen in dislocation-free siliconJournal of Physics C: Solid State Physics, 1984
- The mechanism of radiation-enhanced diffusion of oxygen in silicon at room temperatureJournal of Physics C: Solid State Physics, 1984
- Radiation-enhanced diffusion of oxygen in silicon at room temperatureJournal of Physics C: Solid State Physics, 1983
- Diffusivity of oxygen in silicon at the donor formation temperatureApplied Physics Letters, 1983
- Defects in irradiated silicon: EPR of the tin-vacancy pairPhysical Review B, 1975
- New Oxygen Infrared Bands in Annealed Irradiated SiliconPhysical Review B, 1964
- Defects in Irradiated Silicon. II. Infrared Absorption of the Si-CenterPhysical Review B, 1961
- Mechanism of the Formation of Donor States in Heat-Treated SiliconPhysical Review B, 1958