The effect of metallic contamination on enhanced oxygen diffusion in silicon at low temperatures
- 30 September 1985
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 18 (27) , L861-L866
- https://doi.org/10.1088/0022-3719/18/27/004
Abstract
Measurements are reported for the recovery of stress-induced dichroism in the 9 mu m oxygen infrared absorption band for samples given various treatments prior to stressing. Enhanced hopping rates are observed in samples deliberately contaminated with copper or iron and the degree of enhancement up to a factor of 102 depends on the conditions of the stressing treatment. It is also shown that the enhancement is a transient effect. The results are tentatively explained in terms of an oxygen-vacancy interaction with the vacancies being generated by site switching of the metal atoms.Keywords
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