Diffusivity of oxygen in silicon at the donor formation temperature
- 1 January 1983
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 42 (1) , 73-75
- https://doi.org/10.1063/1.93731
Abstract
We present data on oxygen diffusivity in silicon for the temperature range 270–400 °C. The diffusivity is determined from the recovery kinetics of a stress induced dichroism in the 9-μm oxygen infrared absorption band. We combine our data for well dispersed oxygen (i.e., crystals heat treated at 1350 °C for 20 h), with Mikkelsen’s recent mass transport work at higher temperature to obtain the diffusivity, D=0.17 exp (−2.54/kT), for the range 330–1240 °C. We have also found that the oxygen atomic hopping times can be as much as 100 times faster in crystals that have not received the 1350 °C heat treatment.Keywords
This publication has 11 references indexed in Scilit:
- Oxygen diffusion and thermal donor formation in siliconApplied Physics A, 1982
- Diffusivity of oxygen in silicon during steam oxidationApplied Physics Letters, 1982
- Correlation of oxygen concentration and activated oxygen donors in silicon crystals on a microscaleApplied Physics Letters, 1981
- EPR spectra of heat-treatment centers in oxygen-rich siliconSolid State Communications, 1978
- The formation of interstitial swirl defects in dislocation-free floating-zone silicon crystalsJournal of Crystal Growth, 1976
- Vibrational absorption of carbon in siliconJournal of Physics and Chemistry of Solids, 1965
- The configuration and diffusion of isolated oxygen in silicon and germaniumJournal of Physics and Chemistry of Solids, 1964
- The diffusion of oxygen in silicon and germaniumJournal of Physics and Chemistry of Solids, 1960
- Mechanism of the Formation of Donor States in Heat-Treated SiliconPhysical Review B, 1958
- Oxygen Content of Silicon Single CrystalsJournal of Applied Physics, 1957